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 SemiWell Semiconductor
SBR13003
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 200mV@1.0A/0.25A) - Wide Reverse Bias S.O.A
Symbol
2.Collector
1.Base
3.Emitter
General Description
This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit.
TO-126
1
2
3
Absolute Maximum Ratings
Symbol
VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP 5 ms ) Base Current Base Peak Current ( tP 5 ms ) Total Dissipation at TC = 25 C Storage Temperature Max. Operating Junction Temperature
Value
700 400 9.0 1.5 3.0 0.75 1.5 40 - 65 ~ 150 150
Units
V V V A A A A W C C
Thermal Characteristics
Symbol
RJC RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Value
3.12 89
Units
C/W C/W
Oct, 2002. Rev. 2
Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved
1/6
SBR13003
Electrical Characteristics
Symbol
ICEV VCEO(sus) ( TC = 25 C unless otherwise noted )
Parameter
Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 )
Condition
VCE = 700V VCE = 700V IC = 10 mA IC = 0.5A IC = 1.0A IC = 1.5A IC = 0.5A IC = 1.0A IC = 0.5A IC = 1.0A IC = 1.0A IB1 = 0.2A TP = 25 VCC = 15V IB1 = 0.2A L = 0.35mH VCC = 15V IB1 = 0.2A L = 0.35mH IC = 1.0A IB2 = -0.5A Vclamp = 300V IC = 1.0A IB2 = -0.5A Vclamp = 300V TC = 100 C IB = 0.1A IB = 0.25A IB = 0.5A IB = 0.1A IB = 0.25A VCE = 2V VCE = 2V VCC = 125V IB2 = - 0.2A TC = 100 C
Min
-
Typ
-
Max
1.0 5.0
-
Units
mA
400
-
V
VCE(sat)
Collector-Emitter Saturation Voltage
-
-
0.3 0.5 1.0 1.0 1.2 30 25
V
VBE(sat)
Base-Emitter Saturation Voltage
-
-
V
hFE
DC Current Gain Resistive Load Turn-On Time Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time
10 5
-
ton ts tf ts tf
-
0.2 1.5 0.15
1.0 3.0 0.4
-
2.0 0.12
4.0 0.3
ts tf
-
2.4 0.15
5.0 0.4
Notes : Pulse Test : Pulse width 300, Duty cycle 2%
2/6
SBR13003
Fig 1. Static Characteristics
3.0 2.7 2.4 IB = 500mA IB = 400mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA IB = 300mA 30 40
Fig 2. DC Current Gain
IC, Collector Current [A]
1.8 1.5 1.2 0.9 0.6 0.3 0.0 0 1 2 3 4
hFE, DC Current Gain
2.1
TJ = 125 C
o
20
TJ = 25 C
o
10
Notes : VCE = 5V VCE = 1V
IB = 0mA 5 0 0.01
0.1
1
VCE, Collector-Emitter Voltage [V]
IC, Collector Current [A]
Fig 3. Collector-Emitter Saturation Voltage
10 1.2 1.1 1
Fig 4. Base-Emitter Saturation Voltage
VCE, Collector-Emitter Voltage [V]
VBE, Base-Emitter Voltage [V]
TJ = 125 C
0.1
o
1.0
TJ = 25 C
0.9 0.8 0.7 0.6 0.5 0.1
o
TJ = 25 C
0.01
o
TJ = 125 C
Note : hFE = 5
o
Note : hFE = 5
0.1
1
1
IC, Collector Current [A]
IC, Collector Current [A]
Fig 5. Resistive Load Fall Time
1000 10
Fig 6. Resistive Load Storage Time
100
Notes : VCC = 125V hFE = 5 IB1 = - IB2
tstg, Time [us]
tf, Time [ns]
TJ = 25 C
o
TJ = 25 C
o
Notes : VCC = 125V hFE = 5 IB1 = - IB2
1
0.0
0.3
0.6
0.9
1.2
1.5
1.8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IC, Collector Current [A]
IC, Collector Current [A]
3/6
SBR13003
Fig 7. Safe Operation Areas
10
1
Fig 8. Reverse Biased Safe Operation Areas
1.6
10 s
IC, Collector Current [A]
10
0
1ms DC
10
-1
IC, Collector Current [A]
100 s
1.2
Notes : TJ 100 C IB1 = 1 A RBB = 0 LC = 0.35mH
0.8
VBE(off) = -9V
0.4
-5V -3V -1.5V
Single Pulse
10
-2
10
0
10
1
10
2
10
3
0.0
0
100
200
300
400
500
600
700
800
VCE, Collector-Emitter Clamp Voltage [V]
VCE, Collector-Emitter Clamp Voltage [V]
Fig 9. Power Derating Curve
125
Power Derating Factor (%)
100
75
50
25
0
0
50
100
150
o
200
TC, Case Temperature ( C)
4/6
SBR13003
Inductive Load Switching & RBSOA Test Circuit
LC
IB1
IC IB
VCE
D.U.T
RBB VBE(off) VClamp VCC
Resistive Load Switching Test Circuit
RC
IB1
IC IB
VCE
D.U.T
RBB VBE(off) VCC
5/6
SBR13003
TO-126 Package Dimension
Dim. A B C D E F G H I J K L
mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 3.2 0.62 0.86 0.019 0.028 1.5 0.047 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106
Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.126
A E B
D
F 3 C 2 1
G
L
1. Base 2. Collector 3. Emitter
J K
H I
6/6


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